Abstract:

A reliability issue investigation of InGaAs/GaAs strained layer pseudomorphic high electron mobility transistors (PMHEMT) was carried out by investigating the effect of the position of the donor layer and/or doping profile in the channel on device reliability.  The doped channel PMHEMT median time before failure (MTBF) of 4x104 hours at 110ºC is shown to be limited by dislocations at the InGaAs/GaAs interface and ohmic contact degradation.

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