Junmin Leea , Hyunseok Ohb ,ChanHee Parka , Byeng Dong Younc , and Bongtae Hand
aDepartment of Mechanical and Aerospace Engineering, Seoul National University, Seoul 08826, South Korea
bSchool of Mechanical Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, South Korea
cDepartment of Mechanical and Aerospace Engineering, Seoul National University, Seoul 08826, South Korea
dMechanical Engineering Department, University of Maryland, College Park, MD 20742, USA
This paper develops a degradation test scheme for insulated gate bipolar transistors (IGBTs) that are subjected to repeated electrostatic discharge (ESD). The proposed 7-step scheme is implemented to characterize the latent ESD damage of trench gate ?eld stop IGBTs. An empirical degradation model based on the shift in threshold voltage is proposed with three model parameters: two parameters are IGBT-type-dependent and the other parameter is manufacturer-dependent. The two IGBT-type-dependent parameters for trench gate ?eld stop IGBTs are determined using the test results obtained from two types of IGBT components produced by the same manufacturer. The correlation between the model and the test data is extremely high, which proves the accuracy of the proposed model. The applicability of the model is further corroborated using the test data obtained from IGBT components and modules pro-duced by other manufacturers. The results con?rm that the proposed degradation model can accurately predict the degrada-tion of IGBT components as well as modules subjected to ESD damage.