2018 Internation Conference on Compound Semiconductor Manufacturing Technology, May 7 - 10, Austin, TX

Fabrication and Characterization of Diamond FETs with 2D Conducting Channels

David I. Shahin 1, Kiran Kumar Kovi2, Aayush Thapa1, Yizhou Lu1, Ilya Ponomarev2, James E. Butler2, and Aris Christou1
1CALCE, Center for Advanced Life Cycle Engineering, Department of Mechanical Engineering, University of Maryland, College Park, Maryland 20740, USA
2Euclid TechLabs, Gaithersburg, MD 20879, USA


Field effect transistors (FETs) have been fabricated on smooth (< 3 Å RMS roughness) hydrogen-terminated diamond substrates. FETs with a 25 nm thick Al2O3 dielectric exhibited slightly normally-off behavior with threshold voltage of -0.8 V and maximum output current of 36.8 mA/mm at -10V drain bias. Open air storage and testing of the devices resulted in no shifts in the transfer characteristics, although a slight degradation in output current was observed. The degradation in drain current is believed to be due to passivation of the hydrogen termination by atmospheric contaminants penetrating the Al2O3 dielectric layer.

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