A. Christou1 and J.E. Butler2
1CALCE, Center for Advanced Life Cycle Engineering, Department of Mechanical Engineering, University of Maryland, College Park, Maryland 20740, USA
2Euclid Techlabs, Cleveland, Ohio, 44139, USA
This paper addresses the presence of extended defects, radiation induced defects and device characteristics of microwave power field effect transistors (FETs) built on 1) high quality diamond surfaces exploiting the 2 dimensional delta channel conductivity, and 2) the surface two dimensional “hydrogen terminated” conduction layer in diamond single crystals grown by CVD. The key defects affecting device characteristics are twining structures as well as stacking faults.