ECS Transactions, Volume: 80, Issue: 7, Pg: 197-201, 2017, DOI: 10.1149/08007.0197ecst

High Power Diamond Devices with 2-D Transport Channels

D. I. Shahina, A. Christoua, J. E. Butlerbb
a Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, USA
b Euclid TechLabs, Cleveland, Ohio 44139, USA


This paper addresses the fabrication, radiation induced defects and device characteristics of microwave power field effect transistors (FETs) built on 1) high quality diamond surfaces exploiting the 2 dimensional delta channel conductivity, and 2) the surface two dimensional "hydrogen terminated" conduction layer in diamond single crystals grown by CVD.

This article is available online here and to CALCE Consortium Members for personal review.

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