D. I. Shahina, A. Christoua, J. E. Butlerbb
a Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, USA
b Euclid TechLabs, Cleveland, Ohio 44139, USA
Abstract:
This paper addresses the fabrication, radiation induced defects and device characteristics of microwave power field effect transistors (FETs) built on 1) high quality diamond surfaces exploiting the 2 dimensional delta channel conductivity, and 2) the surface two dimensional "hydrogen terminated" conduction layer in diamond single crystals grown by CVD.
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