Applied Physics Express, Vol. 9, No. 7, June 2016, doi: 10.7567/APEX.9.071003/meta

Enhancement Mode AlGaN/GaN MOS High-electron-mobility Transistors with ZrO2 Gate Dielectric Deposited by Atomic Layer Deposition

Travis J. Anderson1, Virginia D. Wheeler1, David I. Shahin2, Marko J. Tadjer1, Andrew D. Koehler1, Karl D. Hobart1, Aris Christou2, Francis J. Kub1, and Charles R. Eddy Jr.1
1 U.S. Naval Research Laboratory, Washington, D.C. 20375, U.S.A.
2 University of Maryland, College Park, MD 20742, U.S.A.


Advanced applications of AlGaN/GaN high-electron-mobility transistors (HEMTs) in high-power RF and power switching are driving the need for insulated gate technology. We present a metal–oxide–semiconductor (MOS) gate structure using atomic-layer-deposited ZrO2 as a high-k, highbreakdown gate dielectric for reduced gate leakage and a recessed barrier structure for enhancement mode operation. Compared to a Schottky metal-gate HEMT, the recessed MOS-HEMT structure demonstrated a reduction in the gate leakage current by 4 orders of magnitude and a threshold voltage shift of +6V to a record +3.99V, enabled by a combination of a recessed barrier structure and negative oxide charge. © 2016 The Japan Society of Applied Physics

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