Travis J. Anderson1, Virginia D. Wheeler1, David I. Shahin2, Marko J. Tadjer1, Andrew D. Koehler1, Karl D. Hobart1, Aris Christou2, Francis J. Kub1, and Charles R. Eddy Jr.1
1 U.S. Naval Research Laboratory, Washington, D.C. 20375, U.S.A.
2 University of Maryland, College Park, MD 20742, U.S.A.
Advanced applications of AlGaN/GaN high-electron-mobility transistors (HEMTs) in high-power RF and power switching are driving the need for
insulated gate technology. We present a metal–oxide–semiconductor (MOS) gate structure using atomic-layer-deposited ZrO2 as a high-k, highbreakdown
gate dielectric for reduced gate leakage and a recessed barrier structure for enhancement mode operation. Compared to a Schottky
metal-gate HEMT, the recessed MOS-HEMT structure demonstrated a reduction in the gate leakage current by 4 orders of magnitude and a
threshold voltage shift of +6V to a record +3.99V, enabled by a combination of a recessed barrier structure and negative oxide charge.
© 2016 The Japan Society of Applied Physics
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