ECS Journal of Solid State Science and Technology, Vol. 5, No. 7, pp. Q204-Q207, June, 2016

Electrical and Thermal Stability of ALD-Deposited TiN Transition Metal Nitride Schottky Gates for AlGaN/GaN HEMTs

David I. Shahin1, Travis J. Anderson2, Virginia D. Wheeler2, Marko J. Tadjer2, Andrew D. Koehler2, Karl D. Hobart2, Charles R. Eddy Jr.2, Francis J. Kub2, and Aris Christou1
1 Department of Materials Science and Engineering, University of Maryland, College Park, MD, USA
2 Naval Research Laboratory, Washington, DC 20375, USA


TiN, a transition metal nitride, has been evaluated as an electrically and thermally stable Schottky gate material for AlGaN/GaN high electron mobility transistors. HEMTs with 75 nm TiN gates deposited via atomic layer deposition at 350◦C exhibited improved static and dynamic on-state characteristics compared to Ni/Au-gated HEMTs. Reverse bias gate stressing indicated a higher critical voltage and higher breakdown voltage for the TiN-gated HEMTs. The TiN gated devices exhibited stable DC operation after annealing at temperatures as high as 800◦C, while the Ni/Au gates exhibited significant degradation after annealing above 500◦C and failed catastrophically at 800◦C.

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