IEEE Transactions on Power Electronics, Vol. 30, No. 5, May 2015

Physics-of-Failure, Condition Monitoring and Prognostics of Insulated Gate Bipolar Transistor Modules: A Review

Hyunseok Oh, Bongtae Han, Patrick McCluskey, Changwoon Han and Byeng D. Youn


Recent growth of the insulated gate bipolar transistor (IGBT) module market has been driven largely by the increasing demand for an efficient way to control and distribute power in the field of renewable energy, hybrid/electric vehicles, and industrial equipment. For safety-critical and mission-critical applications, the reliability of IGBT modules is still a concern. Understanding the physics-of-failure of IGBT modules has been critical to the development of effective condition monitoring (CM) techniques as well as reliable prognostic methods. This review paper attempts to summarize past developments and recent advances in the area of CM and prognostics for IGBT modules. The improvement in material, fabrication, and structure is described. The CM techniques and prognostic methods proposed in the literature are presented. This paper concludes with recommendations for future research topics in the CM and prognostics areas.

Keywords: Condition monitoring (CM), insulated gate bipolar transistor (IGBT), physics-of-failure (PoF), prognostics.

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