Hyunseok Oh, Bongtae Han, Patrick McCluskey, Changwoon Han and Byeng D. Youn
Recent growth of the insulated gate bipolar transistor
(IGBT) module market has been driven largely by the increasing
demand for an efficient way to control and distribute power in the
field of renewable energy, hybrid/electric vehicles, and industrial
equipment. For safety-critical and mission-critical applications, the
reliability of IGBT modules is still a concern. Understanding the
physics-of-failure of IGBT modules has been critical to the development
of effective condition monitoring (CM) techniques as well
as reliable prognostic methods. This review paper attempts to summarize
past developments and recent advances in the area of CM
and prognostics for IGBT modules. The improvement in material,
fabrication, and structure is described. The CM techniques and
prognostic methods proposed in the literature are presented. This
paper concludes with recommendations for future research topics
in the CM and prognostics areas.
Keywords: Condition monitoring (CM), insulated gate bipolar transistor (IGBT), physics-of-failure (PoF), prognostics.
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