Abstract:

Although accelerated life testing of low noise and power GaAs MESFETs under d.c. bias and RF operation has been conducted, some failure mechanisms remain to be of concern. We will address these concerns and will report on failure models of AlGaAs/GaAs HFETs. The set of reliability physics models then will form the starting point for development of physics based failure models for GaN HFETs devices. Processes in effect in GaN, but not in GaAs, owing to higher fields and much larger field, temperature, and strain coupling are included.

Keywords : Heterojunction field effect transistors, physics of failure, degradation mechanisms, gallium nitride, gallium arsenide, failure models.

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