Microelectronics Reliability Volume 51, Issue 5, May 2011, Pages 946-952

Temperature and voltage aging effects on electrical conduction mechanism in epoxy-BaTiO3 composite dielectric used in embedded capacitors

Mohammed A. Alam, Michael H. Azarian, Michael Osterman, Michael Pecht
Center for Advanced Life Cycle Engineering (CALCE)
1103 Engineering Lab Building
University of Maryland
College Park, MD 20742


The electrical conduction mechanism in an embedded capacitor with epoxy-BaTiO3 composite dielectric and Cu electrodes is investigated in this paper. Leakage current was measured across the dielectric by performing a voltage sweep from 0 to 100 V. The voltage sweep was performed at temperatures ranging from 25 °C to 125 °C. Various electrical conduction models such as Schottky, Poole–Frenkel, and ionic hopping were evaluated by comparing the functional dependence of leakage current on temperature and voltage for each mechanism which was considered. It was observed that the conduction mechanism was most consistent with Schottky emission. The contact potential barrier corresponding to Schottky emission was found to be 1.29 eV.

The effect of combined temperature and voltage aging on the conduction mechanism was investigated by aging the embedded capacitor dielectric at 125 °C and 100 V for 1680 h. To investigate the difference between combined temperature and voltage aging and temperature aging alone, some capacitors were aged only by temperature at 125 °C for 1680 h. Measurements of leakage current as a function of temperature and voltage were performed at frequent intervals during the aging. It was observed that the value of leakage current did not increase during temperature and voltage aging unlike pure BaTiO3 dielectrics.

Complete article is available from publisher and to the CALCE consortium members.

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