CS Mantech Conference, 16-19 May, 2011, Palm Springs, CA

Failure Modes and Effects Criticality Analysis (FMECA) of AlGaN/GaN Based Microwave Device Degradation Mechanisms

Zahra Mohagegh1, Mohammed Modarres1, and Aris Christou1
1University of Maryland, Department of Mechanical Engineering, College Park, MD, 20740, USA


This paper reviews the main degradation mechanisms of GaN-based HEMTs (High Electron Mobility Transistors) based on surfaces, interfaces, substrate and technology issues. Failure Mode and Effects Analysis is proposed as a powerful design assurance technique to identify and minimize potential problems in a process design. The product of an FMECA is a table of information which summarizes the analysis of all possible failure modes.

This article is available to CALCE Consortium Members for personal review.

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