Zahra Mohagegh1, Mohammed Modarres1, and Aris Christou1
1University of Maryland, Department of Mechanical Engineering, College Park, MD, 20740, USA
This paper reviews the main degradation mechanisms of GaN-based HEMTs (High Electron Mobility Transistors) based on surfaces, interfaces, substrate and technology issues. Failure Mode and Effects Analysis is proposed as a powerful design assurance technique to identify and minimize potential problems in a process design. The product of an FMECA is a table of information which summarizes the analysis of all possible failure modes.