Annual Conference of the Prognostics and Health Management Society, 2009

Effects of Lightning Injection on Power-MOSFETs

Jose Celaya1 , Sankalita Saha2 , Phil Wysocki1, Jay Ely2, Truong Nguyen3, George Szatkowski1, Sandra Koppen1, John Mielnik1, Roger Vaughan1, Kai Goebel1
1NASA Ames Research Center, Moffett Field CA, 94035, USA
2NASA Langley Research Center, Hampton VA, 23681, USA
3Lockheed Martin Corporation, Hampton, Virginia, 23681, USA


Lightning induced damage is one of the major concerns in aircraft health monitoring. Such short-duration high voltages can cause significant damage to electronic devices. This paper presents a study on the effects of lightning injection on power metal-oxide semiconductor field effect transistors (MOSFETs). This approach consisted of pininjecting lightning waveforms into the gate, drain and/or source of MOSFET devices while they were in the OFF-state. Analysis of the characteristic curves of the devices showed that for certain injection modes the devices can accumulate considerable damage rendering them inoperable. Early results demonstrate that a power MOSFET, even in its off-state, can incur considerable damage due to lightning pin injection, leading to significant deviation in its behavior and performance, and to possibly early device failures.

This article is available online here and to CALCE Consortium Members for personal review.

[Home Page] [Articles Page]
Copyright © 2009 by CALCE and the University of Maryland, All Rights Reserved