Annual Conference of the Prognostics and Health Management Society, 2009

Effect of Electrostatic Discharge on Electrical Characteristics of Discrete Electronic Components (Technical Brief)

Phil Wysocki1 , Vladislav Vashchenko2 ,Jose Celaya1, Sankalita Saha1, Kai Goebel1
1NASA Ames Research Center, Moffett Field CA, 94035, USA
2Angstrom Design Automation, San Jose, CA, USA


This article reports on preliminary results of a study conducted to examine how temporary electrical overstress seed fault conditions in discrete power electronic components that cannot be detected with reliability tests but impact longevity of the device. These defects do not result in formal parametric failures per datasheet specifications, but result in substantial change in the electrical characteristics when compared with pristine device parameters. Tests were carried out on commercially available 600V IGBT devices using transmission line pulse (TLP) and system level ESD stress.* It was hypothesized that the ESD causes local damage during the ESD discharge which may greatly accelerate degradation mechanisms and thus reduce the life of the components. This hypothesis was explored in simulation studies where different types of damage were imposed to different parts of the device. Experimental results agree qualitatively with the simulation for a number of tests which will motivate more in-depth modeling of the damage.

This article is available online here and to CALCE Consortium Members for personal review.

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