IEEE Transactions on Semiconductor Manufacturing, Vol. 15, No. 1, pp. 253-259, May 2002

Lifetime RC Time Delay of On-Chip Copper Interconnect

Ming Sun
Philips Semiconductors
Sunnyvile, CA 94087

Michael Pecht,
University of Maryland
College Park, MD 20742

David Barbe
University of Maryland
College Park, MD 20742


Increasing resistance and RC time delay induced by an oxidation in a copper line during its lifetime may limit copper based metallization for technologies with critical dimension. Based on the mechanisms of resistance, constriction resistance and material diffusion, two dynamic models to access lifetime behavior of resistance and RC time delay were developed and discussed. These models also provide a means to gain insight into the correlation between the resistance and RC time delay of copper interconnect and such key variables as feature dimension, operating condition, and oxidation.

Complete article is available to CALCE Consortium Members

© IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.


[Home Page][Articles Page]