Procedure for Evaluation of Thermal Management Requirements in a Laser Diode Structure
R. Kamath and P. Mead
Temperature is either a direct catalyst or a precipitating factor in
several common laser diode degradation mechanisms including dark-line defects,
catastrophic optical destruction, metal diffusion and electrode delamination.
This strong correlation between device temperature and performance degradation
heat generation model to perform a finite element analysis to compute steady
state and transient thermal profiles for a laser diode structure.
The flexibility of the FE model is utilized performing a parametric study
of selected variables affecting temperature in the structure. Taguchi
principles are used in the set-up and analysis of this model, and quantitative
correlations between the selected variables and temperature are derived.
The combined interaction expression is then modeled as an optimization
function that may be applied tin thermal management analysis. The
approach demonstrated here conforms to a general methodology for the development
of physics of failure models for degradation in optoelectronic devices.
article is available to CALCE Consortium members.