Tutorial - Electrical Overstress and Electrostatic Discharge
C. Diaz, S. Kang and C. Duvvury
Summary and Conclusions- Semiconductor devices have a limited ability
to sustain electrical overstress (EOS). The device susceptibility
to EOS increases as the device is scaled down to submicron feature size.
At present, EOS is one of major causes for IC failures. Published
reports indicate that nearly 40% for the IC failures can be attributed
to EOS events. Hence, it is imperative to account for EOS threats
early in the design process. For semiconductor devices, EOS embodies
a broad range of electrical threats due to electromagnetic pulses (EMP),
electrostatic discharge (ESD), system transients, and lightning.
EOS-related failures in semiconductor devices can be classified according
to their primary failure mechanisms into: thermally-induced failures, electromigration,
and electric-field-related failures. In general, thermally-induced
failures are related to the doping level, junction depth, and device
whereas electric-field induced failures are primarily related to the breakdown
of thin oxides in MOS devices.