R. Bauernschub and P. Lall
This paper discusses using a physics-of-failure approach to assessing
the defect-related reliability of microelectronic components. In
the past, microelectric reliability has been addressed by reliability prediction.
However, the device field-failure rate paradigm in reliability prediction
effectively prevents the designer from gaining insight into the -failure
mechanisms at work. Consequently, there is no unified approach to
some critical questions: What defects, environmental and test or screen
loads are the reliability drivers for the device? What magnitude
of defects should be allowed to pass the screens? What is the correlation
between the defect magnitudes and operational life? A physics-of-failure
approach gas been developed to address there concerns and determine screening
levels based on failure mechanisms, failure modes, defect magnitudes and
environmental stresses for each design because they are generated from
the physics of the interaction between defects and environmental loads.
Some of the potential defects in microelectronic components have been presented.
The approach is illustrated by an example application to wire bond interconnects.
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