A PoF Approach to Addressing Defect-Related Reliability
R. Bauernschub, P. Lall and M. Pecht
This paper discusses using a physics-of-failure (PoF) approach to assessing
the defect-related reliability of microelectronic components. In
the past, microelectronic reliability has been addressed by reliability
prediction. However, the statistical probabilistic paradigm in reliability
prediction effectively prevents the designer from gaining insight into
the failure mechanisms at work. Consequently, there is no unified
approach to some critical questions: What defects, environmental and test
or screen loads are the reliability drivers for the device? What
magnitudes of defects should be allowed to pass the screens? What
is the correlation between the defect magnitudes and operational life?
A physics-of failure approach has been developed to address these concerns
and determine screening levels based on failure mechanisms, failure modes,
defect magnitudes and environmental stresses for the application.
Chosen tests and screen levels are unique for each design because they
are generated from the physics of the interaction between defects and environmental
loads. Some of the potential defects in microelectronic components
have been presented. The approach is illustrated by an example application
to wire bond interconnects.
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