Abstract:

The incorporation of silicon-buffer layers are shown to be critical in attaining optimized microwave performance for GaAs on silicon MESFET'S.  A current gain cutoff frequency (f1) of 18 GHz and maximum power gain cutoff frequency (fmax) of 30 GHz is reported for relaxed geometry devices.  The low parasitic capacitance and excellent device isolation makes this structure suitable for monolithic integration.

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