Surface Related Failure Mechanisms In Polyimide Passivated L-Band MMICs
G. Halkias, A. Christou, K. Huang, and J. Li
The passivation of MMICs by polyimide is presently being applied to
commercially available L-band and C-band MMICs. The present study
evaluates polyimide passivation reliability in an L-band trans-impedance
amplifier. Transimpedence amplifiers are presently being applied
in multi-gigabit per second optical fiber links since they offer the advantages
of wide dynamic range and large gain, reduction of noise and lower overall
power consumption (500-700 mW). Investigation, the reliability and
failure mechanism of cascode type transimpedance amplifiers was determined
showing that gate leakage in the FETs of the inverting amplifier followed
by gold electronomigration in the drain contacts of the output stage MESFETs
is the primary failure mechanism. This study is the first such investigation
reported for MMIC circuits and shows that surface states present at the
GaAs-Polyimide interface increases gate leakage in the output stage resulting
in failure...
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