EEE Transaction on ELectron Devices, Vol. 40, No. 3, March, 1993

Microwave Performance of GaAs-on-Si MESFET's with Si Buffer Layers

A. Georgakilas, G. Halkias, A. Christou, C. Papavassiliou, G. Perantinos, G. Kontantinidis, and P. Panayotatos


The incorporation of silicon-buffer layers are shown to be critical in attaining optimized microwave performance for GaAs on silicon MESFET's. A current gain cutoff frequency (fi) of 18 GHz and maximum power gain cutoff frequency (fmax) of 30 GHz is reported for relaxed geometry devices. The low parasitic capacitance and excellent device isolation makes this structure suitable for monolithic integration.

Complete article is available to CALCE Consortium Members.

© IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

[Home Page] [Articles Page]
Copyright © 1993 by CALCE and the University of Maryland, All Rights Reserved