A Comprehensive Optimization Of Inaias Molecular Beam Epitaxy For Ingaas/Inaias HEMT Technology
A. Georgakilas, G. Halkias and A. Christou
The effects of the substrate temperature in the molecular beam epitaxy
growth of In0.52Al0.48As on (001) InP have been investigated. A strong
dependence of the structural, electrical, and optical properties of InAlAs
films on the growth temperature has been found and optimized material can
be grown at 530 degrees C. The low substrate temperatures deteriorate
the material quality due to insufficient growth kinetics, while the higher
temperatures allow the formation of composition inhomogeneities which also
which also deteriorate the structural, optical, and electrical characteristics
of In0.52Al0.48As. Using In0.52Al0.48As buffers grown at 530degreesC,
state-of-the-art InxGa1-xGaAs high electron mobility transistors were fabricated
and showed reduced output conductance and no kink effect in the I(V) characteristics.
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