Journal of the Electrochem Society, Vol. 140, No. 5, pp. 1503-1509, May 1993

A Comprehensive Optimization Of Inaias Molecular Beam Epitaxy For Ingaas/Inaias HEMT Technology

A. Georgakilas, G. Halkias and A. Christou


The effects of the substrate temperature in the molecular beam epitaxy growth of In0.52Al0.48As on (001) InP have been investigated.  A strong dependence of the structural, electrical, and optical properties of InAlAs films on the growth temperature has been found and optimized material can be grown at 530 degrees C.  The low substrate temperatures deteriorate the material quality due to insufficient growth kinetics, while the higher temperatures allow the formation of composition inhomogeneities which also which also deteriorate the structural, optical, and electrical characteristics of In0.52Al0.48As.  Using In0.52Al0.48As buffers grown at 530degreesC, state-of-the-art InxGa1-xGaAs high electron mobility transistors were fabricated and showed reduced output conductance and no kink effect in the I(V) characteristics.

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