Applied Physics Lett., Vol. 61(7), pp. 798-800, August 1992
A. Georgakilas, A. Christou, P. Lefebvre, J. Allegre, K. Zekentes, and
G. Halkias
CALCE EPSC
University of Maryland
College Park, MD 20742
Abstract:
The optical properties of InGaAs films grown in plasma etched InP wells
by molecular beam epitaxy have been investigated and compared to the properties
of similar films grown on non-patterned InP substrates. The excitonic
features of the photoluminescence spectra were maintained for the selectively
grown well films.
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