Applied Physics Lett., Vol. 61(7), pp. 798-800, August 1992

Optical Properties of InGaAs Films Embedded in Plasma Etched InP Wells

A. Georgakilas, A. Christou, P. Lefebvre, J. Allegre, K. Zekentes, and G. Halkias
University of Maryland
College Park, MD 20742


The optical properties of InGaAs films grown in plasma etched InP wells by molecular beam epitaxy have been investigated and compared to the properties of similar films grown on non-patterned InP substrates.  The excitonic features of the photoluminescence spectra were maintained for the selectively grown well films.

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