Applied Physics Lett., Vol. 61(7), pp. 798-800, August 1992
A. Georgakilas, A. Christou, P. Lefebvre, J. Allegre, K. Zekentes, and
University of Maryland
College Park, MD 20742
The optical properties of InGaAs films grown in plasma etched InP wells
by molecular beam epitaxy have been investigated and compared to the properties
of similar films grown on non-patterned InP substrates. The excitonic
features of the photoluminescence spectra were maintained for the selectively
grown well films.
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