High Electron Mobility Transistors with Optically Processed Refractory SIlicide Metallizations: Thermal and Microwave Analysis

Proceedings Materials Research Society Symposium, Boston, MA, pp. 549-555, 1992

High Electron Mobility Transistors with Optically Processed Refractory Silicide Metallizations: Thermal and Microwave Analysis

P. Tang, M. Fan, A. Iliadis and A. Christou,
CALCE EPSC
University of Maryland
College Park, MD 20742

Abstract:

The enhanced high temperature gate metallisations consisting of sputtered TiWSi or TiWN were investigated in order to attain high temperature stability at temperature in excess of 250^oC. The TiWN/Au system resulted in a sheet resistance of only 11.5 m*/* while TiWSi/Au resulted in 75.0m*/*. .The HEMTs and FETs processed with additional stable ohmic contacts of epitaxial Ge/Pd structures exhibited a stable transconductance of 160-180 mS/mm at temperatures of 300^oC. Thermal analysis indicated the peak junction temperature increase with an input power of 200 mW to be less than 18^oC at substrate temperature of 60^oC.

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