Proceedings Materials Research Society Symposium, Boston, MA, pp. 549-555, 1992
P. Tang, M. Fan, A. Iliadis and A. Christou,
University of Maryland
College Park, MD 20742
The enhanced high temperature gate metallisations consisting of sputtered
TiWSi or TiWN were investigated in order to attain high temperature stability
at temperature in excess of 250oC. The TiWN/Au system resulted
in a sheet resistance of only 11.5 m*/* while TiWSi/Au resulted in 75.0m*/*.
.The HEMTs and FETs processed with additional stable ohmic contacts of
epitaxial Ge/Pd structures exhibited a stable transconductance of 160-180
mS/mm at temperatures of 300oC. Thermal analysis indicated the
peak junction temperature increase with an input power of 200 mW to be
less than 18oC at substrate temperature of 60oC.
article is available to CALCE Consortium Members.