1992 GaAs and Related Compounds Sym. Proce., Karuizawa, Japan, pp.711-716, Sep. 28- Oct. 1, 1992

HBT Self-Aligned Collector-Base Interface State-Related Failure Mechanism

A. Christou, A. Georgakilas, p. Tang, and A.A. Illadis
University of Maryland
College Park, MD


Self aligned collector-base HBT devices in the GaAs/AlGaAs/InGaAs materials system were accelerate life tested at 200 degrees Celsius, 220 degrees Celsius, and 250 degrees Celsius. The basic degradation mechanism at 220 degrees Celsius and 250 degrees Celsius was identified to be extensive Be redistribution. In addition emitter-base leakage currents related to the Si3N4 passivation were observed at 200 degrees Celsius and 220 degrees Celsius. The degradation was related to a surface state increase at the InGaAs/AlGaAs- Si3N4 interface from 1013eV-1cm-2 to 1015eV-1cm-3

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