J. Mater. Res., Vol. 7, No. 8, pp. 2194-2204, August 1992.

Alloy Clustering And Defect Structure In The Molecular Beam Epitaxy Of In0.53Ga0.47As On Silicon

A. Georgakilas, A. Christou, A. Dimoulas and J. Stoemenos


The MBE growth of Inx Ga11-xAs (x~0.53) on silicon substrates has been investigated emphasizing the effects of substrate orientation and buffer layers between In0.53Ga0.47As and Si.  It is shown that growth on silicon substrates misoriented from (001) toward a [110] direction eliminates the presence of antiphase domains.  The best In0.53 Ga As surface morphology was obtained when a 0.9 Mm eptaxial Si buffer was initially grown, followed by a pre-exposure of the silicon surface to As4 at 350ºC, followed by the growth of In0.53 Ga0.47As.  Threading dislocations, stacking faults, low-angle grain boundaries, and spinodal contrast scale was shown to depend on the buffer type and the total InGaAs thickness.  Thick buffers consisted of GaAs or graded Inx Ga1-x As layers, and large In0.53Ga0.47 As thicknesses favor the development of a coarse-scale spinodal decomposition with periodicity around 0.1 Mm.  Thin GaAs buffers or direct In 0.53 Ga 0.47 growth on Si may result in a fine-scale decomposition of periodicity ~10 nm.  The principal strain direction of the spinodal decomposition appeared along the [110] direction, parallel to the vicinal Si surface step edges.  IngaAs immiscibility affects the InGaAs growth process, favoring a 3-D growth mode.  X-ray diffraction measurements and photo-reflectance spectra indicated that the sample quality was improved for samples exhibiting a fine-scale spinodal decomposition contrast even if they contained a higher dislocation density.  Threading dislocations run almost parallel to the [001] growth axis and are not affected by strained layers and short period (InAs)3/(GaAs)3 super-lattices.  The lowest double crystal diffractometry FWHM for the (004) InGaAs reflection was 720 arc sec and has been obtained growing InGaAs directly on Si, while the lowest dislocation density was 3 x 109 cm-2 and was obtained using a 1.5 Mm GaAs buffer before the In0.53Ga0.47As deposition.

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