Status of Compound Semiconductor Device Reliability
W. Anderson, and A. Christou
A review is made of compound semiconductor device reliability from the
period 1980 to the present. Emphasis is placed on technology based
on field effect transistors (FETs). Many reliability studies were
made of small signal GaAs FETs in the 1970ís and of GaAs power FETs in
the 1980ís; a substantial reliability based exists for these devices.
However, there remains a lack of reliability data for GaAs devices such
as digital ICs, MMICs, and heterojunction transistors (GEMTs, HBTs).
Future directions for high reliability lie in device designs to reduce
channel and junction temperatures, reduction in inter-diffusion and ion
migration between metal/semiconductor layers and between semiconductor
layers, and in the development of high temperature stable Schottky barrier
metallization and Ohmic contacts.
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