K. Cho and C.C. Davis
IEEE Journal of Quantum Electronics, Vol. 25, No. 5, 1989
Time-resolved pulsed photo-thermal radiometry techniques have been used
to study the thermal and optical propertied of silicon. By the use
of a one-dimensional thermal diffusion equation, a theoretical description
for the transient thermal radiation can be developed. Results obtained
for relatively heavily doped samples (0.002 cm) show that pulsed photo-thermal
radiometry is an excellent remote diagnostic technique for silicon over
a wide range of relatively heavy doping levels. For lightly doped
samples (5 cm), an anomalously large thermal radiation signal is observed
that contradicts the explained by the enhancement of the gray-body emissivity
due to laser-generated free carriers. A simple theoretical model
for this free carrier effect is presented.
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